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MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
OUTLINE DRAWING
1.3 4 10.5 MIN
Dimensions in mm
VOLTAGE CLASS 1 3 1
2 0.8
0.5 2.5 2.5 2.6 1 2 3 4 CATHODE ANODE GATE ANODE
4.5
* IT (AV) ......................................................................... 12A * VDRM ..............................................................400V/600V * IGT ..........................................................................30mA APPLICATION Automatic strobe flasher
10.5
Measurement point of case temperature
TO-220C
MAXIMUM RATINGS
Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V
Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg --
Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing
Conditions Commercial frequency, sine half wave, 180 conduction, Tc=91C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
Ratings 18.8 12.0 360 544 5 0.5 6 10 2 -40 ~ +125 -40 ~ +125
12.5 MIN
Unit A A A A2s W W V V A C C g
Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value
1.5
3.8 MAX 8.6
Feb.1999
TYPE NAME
1.5 MAX
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VGD IGT IH Rth (j-c) Rth (j-a) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125C, VDRM applied Tj=125C, VDRM applied Tc=25C, ITM=40A Tj=25C, VD=6V, IT=1A Tj=125C, VD=1/2VDRM Tj=25C, VD=6V, IT=1A Tj=25C, VD=12V Junction to case Junction to ambient Limits Min. -- -- -- -- 0.2 -- -- -- -- Typ. -- -- -- -- -- -- 15 -- -- Max. 2.0 2.0 1.6 1.5 -- 30 -- 1.2 70 Unit mA mA V V V mA mA C/W
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 25C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 400
SURGE ON-STATE CURRENT (A)
360 320 280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102
ON-STATE CURRENT (A)
CONDUCTION TIME (CYCLES AT 60Hz)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE CHARACTERISTICS 3 2 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2
GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE
100 (%)
TYPICAL EXAMPLE
GATE VOLTAGE (V)
VGT = 1.5V IGT = 30mA
PG(AV) = 0.5W
100 7 5 3 2
IFGM = 2A
10-1 VGD = 0.2V 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
GATE TRIGGER CURRENT (Tj=tC) GATE TRIGGER CURRENT (Tj=25C)
101 7 5 3 2
VFGM = 6V
PGM = 5W
100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.6
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
1.4
1.2 1.0 0.8
0.6 0.4 0.2
,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,, ,,,,,,,,,,,,,,
DISTRIBUTION TYPICAL EXAMPLE 0 -40 -20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (C)
TRANSIENT THERMAL IMPEDANCE (C/W)
GATE TRIGGER VOLTAGE (V)
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 JUNCTION TO AMBIENT 7 5 3 2 101 7 5 3 2 100 7 5 3 2 JUNCTION TO CASE
10-1 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 TIME (s)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 64
48 40 32 24 16 8 0 0
360 120 RESISTIVE, 90 INDUCTIVE 60 LOADS = 30
180
CASE TEMPERATURE (C)
56
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 RESISTIVE, INDUCTIVE 140 LOADS 360 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 = 30 60 90 180 120
4
8
12
16
20
24
28
32
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
140 120 100 80 60 40 20 0 0 = 30 60 180
AVERAGE POWER DISSIPATION (W)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 AMBIENT TEMPERATURE (C) 360 RESISTIVE, 120 INDUCTIVE LOADS 90
MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 64 56 48 40 32 24 16 8 0 0 4 8 12 = 30 60 180 120 90
360 RESISTIVE LOADS 16 20 24 28 32
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (C) 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 90 60 120 180 AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 140 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 = 30 60 180
360 RESISTIVE LOADS
360 RESISTIVE LOADS 120 90
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
AVERAGE POWER DISSIPATION (W)
MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 64 CASE TEMPERATURE (C) 56 48 40 32 24 16 8 0 0 4 8 12 16 20 24 28 32 360 RESISTIVE, INDUCTIVE LOADS = 30
ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160 140 120 100 80 60 40 20 0 0 4 8 12 16 20 24 28 32 = 30 90 180 60 120 270 DC 360 RESISTIVE, INDUCTIVE LOADS
180 270 120 DC 90 60
AVERAGE ON-STATE CURRENT (A)
AVERAGE ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
100 (%)
ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 160
BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE 200 180 160 TYPICAL EXAMPLE
AMBIENT TEMPERATURE (C)
140 120 100 80 60 40 20 0 0 = 30 60 90 120 DC RESISTIVE, INDUCTIVE LOADS
360
BREAKOVER VOLTAGE (Tj = tC) BREAKOVER VOLTAGE (Tj = 25C)
140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
270 180
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AVERAGE ON-STATE CURRENT (A)
BREAKOVER VOLTAGE (dv/dt = vV/s ) BREAKOVER VOLTAGE (dv/dt = 1V/s )
HOLDING CURRENT (mA)
BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125C TYPICAL 140 EXAMPLE 120 IGT (25C) # IGT = 10.1mA 100 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/s) #
100 (%)
HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 #2 #1 TYPICAL EXAMPLE IGT (25C) # 1 10.6mA # 2 11.6mA
100 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
TURN-ON TIME VS. GATE CURRENT 10.0 9.0 Ta = 25C VD = 100V RL = 12 TYPICAL EXAMPLE IGT (25C) # IGT = 11.2mA
TURN-ON TIME (s)
8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 #
REPETITIVE PEAK REVERSE VOLTAGE (Tj=tC) REPETITIVE PEAK REVERSE VOLTAGE (Tj=25C)
REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 200 TYPICAL EXAMPLE 180 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA)
100 (%)
Feb.1999
MITSUBISHI SEMICONDUCTOR THYRISTOR
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH
DISCHARGING CAPACITOR CM (F)
104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2
100 (%)
tw
MAXIMUM ALLOWABLE PEAK ON-STATE CURRENT VS. DISCHARGE CAPACITOR 800 700 600 500 400 300 200 CM 100 0 0 400 800 1200 1600 2000 350V ITM Ta = 25C REPETITIVE CYCLE T > 5s
0.1s
GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC)
101 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (s)
PEAK ON-STATE CURRENT (A)
Feb.1999

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